AIST researchers have developed an instrument for X-ray absorption fine structure (XAFS) spectroscopy equipped with a superconducting detector. With the instrument, the researchers have realized, for the first time, local structure analysis of nitrogen (N) dopants (impurity atoms at a very low concentration), which were introduced by ion plantation in silicon carbide (SiC), a wide-gap semiconductor, and are necessary for SiC to be a n-type semiconductor.
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